ZXT849K_15 Datasheet, PDF (2/6 Pages) Diodes Incorporated – 30V NPN LOW SATURATION TRANSISTOR IN D-PAK

ZXT849K
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current ^(b)
Base current
Power dissipation at T_A =25°C ^(a)
Linear derating factor
Power dissipation at T_A =25°C ^(b)
Linear derating factor
Power dissipation at T_A =25°C ^(c)
Linear derating factor
Operating and storage temperature range
SYMBOL
BV_CBO
BV_CER
BV_CEO
BV_EBO
I_CM
I_C
I_B
P_D
P_D
P_D
T_j, T_stg
LIMIT
80
80
30
7
20
7
0.5
2.1
16.8
3.2
25.6
4.2
33.6
-55 to +150
UNIT
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient ^(a)
Junction to ambient ^(b)
Junction to ambient ^(c)
SYMBOL
R_⍜JA
R_⍜JA
R_⍜JA
VALUE
59
39
30
UNIT
°C/W
°C/W
°C/W
NOTES
(a) (For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(c) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper in still air conditions.
SEMICONDUCTORS
ISSUE 2 - DECEMBER 2003
2