ZXT2MA_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 20V PNP LOW SATURATION SWITCHING TRANSISTOR

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Diodes Incorporated
ZXT2MA
Maximum Ratings
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
V_CBO
-25
V
Collector-Emitter Voltage
V_CEO
-20
V
Emitter-Base Voltage
V_EBO
-7.5
V
Peak Pulse Current
Continuous Collector Current
I_CM
-6
A
(Note 4)
(Note 5)
I_C
-3.5
-4.0
A
Base Current
I_B
-1
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Power Dissipation
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Symbol
P_D
R_θJA
Value
1.5
12
2.45
19.6
83
51
Unit
W
mW/°C
°C/W
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 6)
R_θJL
T_J, T_STG
16.8
-55 to +150
°C/W
°C
Notes:
4. For a device surface mounted on 31mm x 31mm (10cm²) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
5. Same as note (4), except the device is measured at t < 5 sec.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXT2MA
Document Number: DS35302 Rev. 1 - 2
2 of 7
www.diodes.com
April 2011
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