ZXSC410 Datasheet, PDF (2/12 Pages) Zetex Semiconductors – VOLTAGE MODE BOOST CONVERTER

ZXSC410
ZXSC420
ABSOLUTE MAXIMUM RATINGS
VCC
DRIVE
EOR
STDN
VFB, SENSE
Operating Temp.
Storage Temp.
Power Dissipation
-0.3V to
-0.3V to
-0.3V to
-0.3V to
-0.3V to
-40°C to
-55°C to
450mW
+10V
VCC + 0.3V
VCC + 0.3V
The lower of (+5.0V) or (VCC + 0.3V)
The lower of (+5.0V) or (VCC + 0.3V)
+85°C
+125°C
* (ZXSC420 only)
* (ZXSC410 only)
ELECTRICAL CHARACTERISTICS
Test Conditions VCC= 3V, T= -40°C to 85°C unless otherwise stated.
Symbol Parameter
Conditions
Supply parameters
V_CC
V_CC Range
Iq¹
Quiescent Current
I_STDN
Shutdown Current
V_CC = 8V
Limits
Min
Typ
Max
1.8
8
220
4.5
Units
V
␮A
␮A
Eff²
Efficiency
Acc_REF
Reference tolerance
TCO_REF
Reference Temp Co
T_DRV
Discharge pulse width
F_OSC
Operating Frequency
Input parameters
50mA > I_OUT > 300mA
1.8V < V_CC < 8V
1.8V < V_CC < 8V
V_SENSE
sense voltage
I_SENSE
sense input current
V_FB
Feedback voltage
I_FB2
Feedback input current
V_IH
Shutdown high voltage
V_IL
Shutdown low voltage
dV_LN
Line voltage regulation
Output parameters
I_O
U
3
T
Output current
I_DRIVE
Transistor drive current
V_DRIVE
Transistor voltage drive
C_DRIVE
Mosfet gate drive cpbty
VOH_EOR EOR Flag output high
VOL_EOR EOR Flag output low
T_EOR
EOR delay time
dI_LD
Load current regulation
V_FB=0V;V_SENSE=0V
T_A = 25°C
V_FB=0V;V_SENSE=0V
V_IN > 2V, V_OUT = V_IN
V_DRIVE = 0.7V
1.8V < V_CC < 8V
I_EOR = -300nA
I_EOR = 1mA
T_A = 25°C
Note
1
2
3
Excluding gate/base drive current.
IFB is typically half of these values
System not device spec, including
at 3V
recommended
transistors.
85
%
-3.0
3.0
%
0.005
%/ЊC
1.7
␮s
200
kHz
22
28
-1
-7
291
300
-1.2
1.5
1
0
0.5
34
mV
-15
␮A
309
mV
-4.5
␮A
V_CC
V
0.55
V
%/V
300
mA
2
3.4
5
mA
0
V_CC-0.4 V
300
pF
2.5
V_CC
V
0
1.15
V
70
195
250
␮s
0.01
%mA
SEMICONDUCTORS
2
ISSUE 2 - May 2003