ZXMP10A17K_15 Datasheet, PDF (2/8 Pages) Diodes Incorporated – 100V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXMP10A17K
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V_DSS
-100
V
Gate-Source Voltage
(Note 6)
V_GS
±20
V
-3.9
Continuous Drain current
V_GS = 10V T_A = +70°C (Note 6)
I_D
-3.1
A
(Note 5)
-2.4
Pulsed Drain current
V_GS= 10V
(Note 7)
I_DM
-11.3
A
Continuous Source Current (Body diode)
(Note 6)
I_S
-8.7
A
Pulsed Source Current (Body diode)
(Note 7)
I_SM
-11.3
A
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 9)
(Note 5)
(Note 6)
(Note 9)
(Note 8)
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
4.0
32.0
10.2
80.8
2.0
16.1
31
12.3
62
2.4
-55 to 150
Unit
W
mW/°C
°C/W
°C/W
°C
Notes:
5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (1), except the device is measured at t ≤ 10 sec.
7. Same as note (1), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
ZXMP10A17K
Document Number DS32028 Rev. 5 - 2
2 of 8
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April 2014
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