ZXMP10A17E6_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 100V P-CHANNEL ENHANCEMENT MODE MOSFET

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS= 10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Note 6)
TA = +70°C (Note 6)
(Note 5)
(Note 7)
(Note 6)
(Note 7)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
ZXMP10A17E6
Value
Unit
-100
V
20
V
-1.6
-1.3
A
-1.3
-7.7
A
-2.1
A
-7.7
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 5)
Power Dissipation
Linear Derating Factor
PD
(Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
RθJA
TJ, TSTG
Value
1.1
8.8
1.7
13.7
113
73
-55 to +150
Unit
W
mW/°C
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Symbol Min
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gfs
VSD
trr
Qrr
-100


-2





Ciss

Coss

Crss

Qg

Qg

Qgs

Qgd

tD(on)

tr

tD(off)

tf

Typ





2.8
-0.85
33
48
424
36.6
29.8
7.1
10.7
1.7
3.8
3
3.5
13.4
7.2
Max

-0.5
100
-4
0.35
0.45

-0.95













Unit
Test Condition
V I_D = -250µA, V_GS = 0V
µA V_DS = -100V, V_GS = 0V
nA V_GS = 20V, V_DS = 0V
V
ID = -250µA, VDS = VGS
Ω
VGS = -10V, ID = -1.4A
VGS = -6V, ID = -1.2A
S V_DS = -15V, I_D = -1.4A
V I_S = -1.7A, V_GS = 0V
ns
nC ^{IS = -1.5A, di/dt = 100A/µs}
pF
pF ^{VDS = -50V, VGS = 0V}
F = 1MHz
pF
nC V_GS = -6V
nC
nC V_GS = -10V
nC
VDS = -50V
ID = -1.4A
ns
ns V_DD = -50V, V_GS = -10V
ns I_D = -1A, R_G  6Ω
ns
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t  5 sec.
7. Same as Note 5, except the device is pulsed with D = 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.
8. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%.
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
ZXMP10A17E6
Document Number DS32027 Rev. 7 - 2
2 of 7
www.diodes.com
March 2015
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