ZXMN7A11K Datasheet, PDF (2/8 Pages) Zetex Semiconductors – 70V N-channel enhancement mode MOSFET

ZXMN7A11K
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
@ V_GS=10V; T_A=25°C (b)
@ V_GS=10V; T_A=70°C (b)
@ V_GS=10V; T_A=25°C (a)
Pulsed drain current (c)
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
Power dissipation at T_A =25°C (a)
Linear derating factor
Power dissipation at T_A =25°C (b)
Linear derating factor
Power dissipation at T_A =25°C (d)
Linear derating factor
Operating and storage temperature range
Symbol
V_DSS
V_GS
I_D
I_DM
I_S
I_SM
P_D
P_D
P_D
T_j, T_stg
Limit
70
±20
6.1
4.9
4.2
17
8.7
17
4.06
32.4
8.5
68
2.11
16.8
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
Symbol
R_⍜JA
R_⍜JA
R_⍜JA
Limit
30.8
14.7
59.1
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300␮s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 2 - August 2006
2
© Zetex Semiconductors plc 2006
www.zetex.com