ZXMN2B03E6 Datasheet, PDF (2/8 Pages) Zetex Semiconductors – 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability

ZXMN2B03E6
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current^(c)
@ V_GS= 4.5V; T_amb=25°C^(b)
@ V_GS= 4.5V; T_amb=70°C^(b)
@ V_GS= 4.5V; T_amb=25°C^(a)
Continuous source current (body diode)^(b)
Pulsed source current (body diode)^(c)
Power dissipation at T_amb =25°C^(a)
Linear derating factor
Power dissipation at T_amb =25°C^(b)
Linear derating factor
Operating and storage temperature range
Symbol
V_DSS
V_GS
I_D
I_DM
I_S
I_SM
P_D
P_D
T_j, T_stg
Limit
20
±8
5.4
4.3
4.3
26
2.8
26
1.1
8.8
1.7
13.7
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient^(a)
Junction to ambient^(b)
Symbol
R_⍜JA
R_⍜JA
Limit
113
73
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction
temperature.
Issue 1 - September 2006
2
© Zetex Semiconductors plc 2006
www.zetex.com