ZXM64N03X Datasheet, PDF (2/7 Pages) Zetex Semiconductors – 30V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXM64N03X
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current
(V_GS=4.5V; T_A=25°C)(b)
(V_GS=4.5V; T_A=70°C)(b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T_A=25°C (a)
Linear Derating Factor
Power Dissipation at T_A=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V_DSS
V_GS
I_D
I_DM
I_S
I_SM
P_D
P_D
T_j:T_stg
LIMIT
30
Ϯ20
5.0
4.0
30
2.4
30
1.1
8.8
1.8
14.4
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R_θJA
113
°C/W
Junction to Ambient (b)
R_θJA
70
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - OCTOBER 2005
2
SEMICONDUCTORS