ZVP3310F Datasheet, PDF (2/2 Pages) Zetex Semiconductors – P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVP3310F
TYPICAL CHARACTERISTICS
-0.6
-0.4
-0.2
0
-2
-4
-6
-8
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
VGS=
-20V
-16V
-14V
-12V
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-10
-10
-8
-6
ID=
-4
-0.3A
-2
-0.15A
-0.075A
0
0
-2
-4
-6
-8
-10
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
100
90
80
70
60
50
40
30
20
10
BI
0
VDS= -10V
0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8
ID- Drain Current (Amps)
Transconductance v drain current
50
VGS= 0V
40
f= 1MHz
30
20
Ciss
10
Coss
Crss
0
0
-20
-40
-60
-80
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
-16
-14
-12
-10
-8
-6
-4
-2
5
/
0
0
VDS=
-25V
-50V -100V
0.2
0.4
0.6
0.8
ID= -
0.2A
1.0
1.2
Q-Charge (nC)
Gate charge v gate-source voltage
2.6
2.4
VGS= -10V
2.2
ID= -150mA
2.0
1.8
1.6
1.4
1.2
V V GS= DS
1.0
ID= -1mA
0.8
0.6
-40 -20 0 20 40 60 80 100 120 140 160 180
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
3 - 437