ZVP3306F Datasheet, PDF (2/2 Pages) Zetex Semiconductors – P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVP3306F
TYPICAL CHARACTERISTICS
-10
-8
ID=
-400mA
-6
-4
-2
-200mA
0
0
-2
-100mA
-4
-6
-8
-10
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
VGS=
-16V
-14V
-12V
-10V
-9V
-8V
-7V
-6V
-5V
-4.5V
-2
-4
-6
-8
-10
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
60
50
Note:VGS=0V
f=1MHz
40
Ciss
30
20
Coss
10
Crss
0
0
-10
-20
-30
-40
-50
-60 -70
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
2
1
Note:ID=- 0.2A
0
-2
-4
VDS=
-6
-20V-40V -60V
-8
-10
-12
5
-14
/
-16
0
0.5
1.0
1.5
Q-Gate Charge (nC)
Gate charge v gate-source voltage
100
VGS=-5V -6V
-7V
-10V
10
-15V
-20V
1
-10
-100
-1000
ID-Drain Current (mA)
On-resistance vs Drain Current
2.6
VGS=-10V
ID=0.37A
2.0
V V GS= DS
1.0
ID=-1mA
0.6
-40 -20 0 20 40 60 80 100 120 140 160 180
Junction Temperature (°C)
Normalised RDS(on) and VGS(th) vs Temperature
3 - 435