ZVN4106FTA Datasheet, PDF (2/6 Pages) Diodes Incorporated – 60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET IN SOT23

A Product Line of
Diodes Incorporated
ZVN4106F
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 5)
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
60
±20
200
3
Unit
V
V
mA
A
Thermal Characteristics
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 6)
(Note 6)
Symbol
P_D
R_θJA
T_J, T_STG
Value
350
357
-55 to +150
Notes:
5. Device mounted on minimum recommended pad layout test board, 10 s pulse duty cycle = 1%.
6. For a device mounted on 25mm X 25mm X 1.6mm FR-4 PCV with high coverage of single sided 1oz copper, in still air condition.
Unit
mW
°C/W
°C
Thermal Characteristics
ZVN4106F
Document number: DS33360 Rev. 3 - 2
2 of 6
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July 2012
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