ZVN3306A Datasheet, PDF (2/3 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVN3306A
TYPICAL CHARACTERISTICS
VGS=10V 9V
1.0
8V
0.8
7V
0.6
6V
0.4
5V
0.2
4V
3V
0
0
2
4
6
8
10
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
10
8
6
ID=
1A
4
2
0
0
2
4
6
8
VGS -Gate Source Voltage (Volts)
0.5A
0.25A
10
Voltage Saturation Characteristics
1.0
VDS=10V
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
10
5
ID=
1A
0.5A
0.25A
1
1
10
20
VGS-Gate Source Voltage (Volts)
On-resistance vs gate-source voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
ID=-0.5A
Drain-Source ^Resistance
R^DS(on)
1.0
0.8
0.6
Gate _{Threshold Voltage VGS(th)}
0.4
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
T-Temperature (C°)
Normalised RDS(on) and VGS(th) vs Temperature
200
180
160
140
120
VDS=18V
100
80
60
40
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
ID(on) - Drain Current (Amps)
Transconductance v drain current
3-376