ZTX788B Datasheet, PDF (2/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

ZTX788B
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency
f_T
100
MHz I_C=-50mA, V_CE=-5V
f=50MHz
Input Capacitance
C_ibo
225
pF
Output Capacitance
C_obo
25
pF
Switching Times
t_on
t_off
35
ns
400
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
V_EB=-0.5V, f=1MHz
V_CB=-10V, f=1MHz
I_C=-500mA, I_B1=-50mA
I_B2=-50mA, V_CC=-10V
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient₁
R_th(j-amb)1
175
Junction to Ambient₂
R_th(j-amb)2†
116
Junction to Case
R_th(j-case)
70
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
°C/W
°C/W
°C/W
2.5
2.0
1.5
1.0
0.5
AmbieCnat ^{steemtemppeerraattuurree}
0
-40 -20 0 20 40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Derating curve
200
D=1 (D.C.)
t1 _D=t1/tP
100
tP
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.0001 0.001 0.01 0.1
1
10
100
Pulse Width (seconds)
Maximum transient thermal impedance
3-274