ZTX752_15 Datasheet, PDF (2/3 Pages) Diodes Incorporated – PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

ZTX752
ZTX753
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
ZTX752
ZTX753
SYMBOL
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
f_T
100 140
100 140
MHz I_C=-100mA, V_CE=-5V
f=100MHz
Switching Times t_on
40
40
ns
t_off
600
600
ns
Output
Capacitance
C_obo
30
30 pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
I_C=-500mA, V_CC=-10V
I_B1=I_B2=-50mA
V_CB=10V f=1MHz
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
Thermal Resistance:Junction to Ambient₁
R_th(j-amb)1
175
Junction to Ambient₂
R_th(j-amb)2†
116
Junction to Case
R_th(j-case)
70
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
UNIT
°C/W
°C/W
°C/W
2.5
2.0
1.5
1.0
0.5
AmbieCnat ^{steemtemppeerraattuurree}
0
-40 -20 0 20 40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Derating curve
200
100
D=1 (D.C.)
t1 _D=t1/tP
tP
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.0001 0.001 0.01 0.1
1
10
100
Pulse Width (seconds)
Maximum transient thermal impedance
3-261