ZTX749 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

ZTX749
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition
Frequency
Output Cpacitance
Switching Times
f_T
100
160
MHz
I_C=-100mA,
V_CE=-5V f=100MHz
C_obo
55
100
pF
V_CB=-10V f=1MHz
t_on
40
ns
I_C=-500mA,
V_CC=-10V
t_off
450
ns
I_B1=I_B2=-50mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient₁
Junction to Ambient₂
Junction to Case
R_th(j-amb)1
R_th(j-amb)2 †
R_th(j-case)
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
2.5
2.0
1.5
1.0
0.5
AmbieCnat ^{steemtemppeerraattuurree}
0
-40 -20 0 20 40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Derating curve
200
D=1 (D.C.)
t1 _D=t1/tP
tP
100
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.0001 0.001 0.01 0.1
1
10
100
Pulse Width (seconds)
Maximum transient thermal impedance
3-255