ZTX552_15 Datasheet, PDF (2/2 Pages) Diodes Incorporated – PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

ZTX552
ZTX553
TYPICAL CHARACTERISTICS
-0.8
-0.6
IC/IB=10
-0.4
td _tr
ns _ns
100 200
80 160
ts
tf
60 120 _td
ts tf
µS nS
3 600
IB1=IB2=IC/10
2 400
-0.2
40 80
tr
20 40
1 200
100
0
-0.001
-0.01
-0.1
-1
00
-0.01
-0.1
00
-1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
100
80
VCE=-10V
60
40
20
-0.001
-0.01
-0.1
-1
-10
IC - Collector Current (Amps)
hFE v IC
-1.2
VCE=-10V
-1.0
-0.8
-0.6
-0.4
-0.0001 -0.001
-0.01
-0.1
-1
IC - Collector Current (Amps)
VBE(on) v IC
-1.0
IC/IB=10
-0.8
-0.6
-0.4
-0.2
-0.001
-0.01
-0.1
-1
IC - Collector Current (Amps)
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
-10
-1
-0.1
D.C.
1s
100ms
10ms
1.0ms
100µs
ZTX552
-0.01
-0.1
-1
ZTX553
-10
-100
VCE - Collector Voltage (Volts)
Safe Operating Area
3-197