VN10LP_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – 60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Symbol
VDSS
VGSS
ID
IDM
A Product Line of
Diodes Incorporated
VN10LP
Value
Unit
60
V
±20
V
270
mA
3
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 5)
(Note 5)
(Note 6)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
625
200
71
-55 to +150
Unit
mW
°C/W
°C/W
°C
Notes:
5. For a through-hole device mounted on the minimum recommended pad layout with 12mm lead length from the bottom of package to the single-sided
FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the drain lead).
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
On state Drain Current (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time (Note 8)
Turn-Off Time (Note 8)
Symbol
BVDSS
IDSS
IGSS
ID(on)
VGS(th)
RDS (ON)
gfs
Ciss
Coss
Crss
t(on)
t(off)
Min
60


750
0.8

100





Typ
Max
Unit
Test Condition


V I_D = 250µA, V_GS = 0V

10
µA V_DS = 60V, V_GS = 0V

±100
nA V_GS = 20V, V_DS = 0V


mA V_DS=15 V, V_GS=10V

2.5
V
ID = 1mA, VDS = VGS

5.0
7.5
Ω
VGS = 10V, ID = 500mA
VGS = 5V, ID = 200mA


mS V_DS = 15V, I_D = 500mA

60

25
pF
VDS = 25V, VGS = 0V
f = 1.0MHz

5


10
10
ns V_DD = 15V, I_D = 600mA
Notes:
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
8. Switching characteristics are independent of operating junction temperature. Switching times are measured with 50ohm source impedance and
<5ns rise time on a pulse generator.
9. For design aid only, not subject to production testing.
VN10LP
Document Number DS33198 Rev. 4 - 2
2 of 5
www.diodes.com
December 2014
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