UMC4N Datasheet, PDF (2/4 Pages) Diodes Incorporated – DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS

Electrical Characteristics, Pre-Biased NPN Transistor, Q₁ @T_A = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Input Resistance
Resistance Ratio
*Characteristic of Transistor – for reference only.
Symbol
V_I(off)
V_I(on)
V_O(on)
I_I
I_O(off)
G_I
f_T
R₁
R₂/R₁
Min
⎯
3
⎯
⎯
⎯
68
⎯
32.9
0.8
Typ Max
⎯
0.5
⎯
⎯
0.1
0.3
⎯
0.18
⎯
0.5
⎯
⎯
250
⎯
47
61.1
1
1.2
Unit
V
V
V
mA
μA
⎯
MHz
kΩ
⎯
Test Condition
V_CC = 5V, I_O = 100μA
V_O = 0.3V, I_O = 2mA
I_O/ I_I = 10mA/0.5 mA
V_I = 5V
V_CC = 50V, V_I = 0V
V_O = 5V, I_O = 5mA
V_CE = 10V, I_E = -5mA, f = 100MHz*
⎯
⎯
Electrical Characteristics, Pre-Biased PNP Transistor, Q₂ @T_A = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Input Resistance
Resistance Ratio
*Characteristic of Transistor – for reference only.
Symbol
Min
Typ Max
Unit
Test Condition
V_I(off)
⎯
⎯
-0.3
V
V_CC = -5V, I_O = -100μA
V_I(on)
-1.4
⎯
⎯
V
V_O = -0.3V, I_O = -1mA
V_O(on)
⎯
-0.1 -0.3
V
I_O/ I_I = -5mA/-0.25 mA
I_I
⎯
⎯
-0.88
mA V_I = -5V
I_O(off)
⎯
⎯
-0.5
μA V_CC = -50V, V_I = 0V
G_I
68
⎯
⎯
⎯ V_O = -5V, I_O = -5mA
f_T
⎯
250
⎯
MHz V_CE = -10V, I_E = 5mA, f = 100MHz*
R₁
7
10
13
kΩ
⎯
R₂/R₁
3.7
4.7
5.7
⎯
⎯
1,000
100
T_A = 150°C
T_A = 85°C
10
T_A = 25°C
T_A = -55°C
1
V_O = 5V
I_O, OUTPUT CURRENT (mA)
Fig. 1 Typical DC Current Gain vs. Output Current (Q1, NPN)
I_O/I_I = 20
T_A = 85°C ^{TA = 150°C}
T_A = -55°C ^TA ^{= 25°C}
0.1
1
10
100
DS31203 Rev. 3 - 2
2 of 4
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