T12S5-7 Datasheet, PDF (2/4 Pages) Diodes Incorporated – UNIDIRECTIONAL SURFACE MOUNT TVS

T3V3S5 / T5V0S5 / T6V0S5 / T12S5
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Forward Voltage @ I_F = 10mA
V_F
0.9
V
Human Body Model
8
kV
ESD Rating
Machine Model
IEC61000-4-2 Air Discharge
ESD
400
30
V
kV
IEC61000-4-2 Contact Discharge
30
kV
Thermal Characteristics
Characteristic
Power Dissipation (Note 7) (See figure 2)
Thermal Resistance, Junction to Ambient Air (Note 7)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
150
833
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Part
Number
Reverse
Min.
Breakdown
Standoff _Voltage
Voltage _{VBR @ IT}
Test
Current
V_RWM (V)
T3V3S5 3.3
T5V0S5 5.0
T6V0S5 6.0
T12S5 12
Min (V)
5.0
6.2
6.8
14.1
I_T (mA)
1.0
1.0
1.0
1.0
Max. Reverse
Leakage @
V_RWM
(Note 8)
I_R (A)
1
0.05
0.05
0.01
Typ. Clamping
Voltage
@ I_PP =5A
(t_p = 8 x 20 s)
(See figure 1)
V_C (V)
8.4
15
11.6
19.7
Max. Clamping
Voltage V_c1
@ I_PP1
(t_p = 8 x 20 s)
(See Figure 1)
V_C (V)
14.1
22
17
25
I_PP (A)
11.2
9.4
8.8
9.6
Max. Clamping
Voltage V_c2
@ I_PP2
(t_p = 8 x 20 s)
(See Figure 1)
V_C (V)
16
27
22.4
28
I_PP (A)
16
15
13
12
Typical Total
Peak Power _Capacitance
Dissipation
(See Figure 1)
V_R = 0V
Marking
Code
f = 1MHz
P_PK (W)
C_T (pF)
220
85
ED
260
100
EJ
260
90
EL
300
60
ES
Notes:
7. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
8. Short duration pulse test used to minimize self-heating effect.
0.3
NNoottee 75
0.2
T3V3S5 / T5V0S5 / T6V0S5 / T12S5
Document number: DS31112 Rev. 10 - 2
0.1
0
0
25
50
75
100 _{125 150}
T_A,
AMBIENT TEMPERATURE (°
Fig. 2 Power Derating Curve
C)
2 of 4
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August 2013
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