SDM0230CSP Datasheet, PDF (2/4 Pages) Diodes Incorporated – 0.2A SCHOTTKY BARRIER DIODE CHIP SCALE PACKAGE

Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Symbol
V_RRM
I_O
I_FSM
SDM0230CSP
Value
Unit
30
V
0.2
A
4.5
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
R_θJA
T_J, T_STG
Value
261
-55 to +150
Unit
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Forward Voltage Drop
Leakage Current (Note 6)
Junction Capacitance
Symbol
Min
—
V_F
—
—
—
I_R
—
C_J
—
Typ
0.30
0.42
0.36
—
1.5
9
Max
0.35
0.50
—
50
—
—
Unit
Test Condition
I_F = 10mA, T_J = +25°C
V
I_F = 200mA, T_J = +25°C
I_F = 200mA, T_J = +125°C
µA
V_R = 30V, T_J = +25°C
mA
V_R = 30V, T_J = +125°C
pF
V_R = 15V, T_J = +25°C , f = 1MHz
Notes:
5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout per http://www.diodes.com/datsheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
Typical Electrical Characteristics
1,000
100
T_A = 150°C
10 ^{TA = 125°C}
1
T_A = 85°C
T_A = 25°C
0.1
T_A = -55°C
0.01
0
0.1
0.2 0.3
0.4
0.5 0.6
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1 Typical Forward Characteristics
10000
1000
T_A = 150°C
100
10
T_A = 85°C
1
T_A = 125°C
T_A = 25°C
0.1
0.01
T_A = -55°C
0.001
0.0001
0
5
10
15
20
25
30
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 2 Typical Reverse Characteristics
SDM0230CSP
Document number: DS35649 Rev. 7 - 2
2 of 4
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May 2013
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