SD101AWS_10 Datasheet, PDF (2/4 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

SD101AWS – SD101CWS
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 4)
Forward Voltage Drop
Peak Reverse Current (Note 4)
Total Capacitance
Reverse Recovery Time
Symbol Min Typ Max Unit Test Conditions
SD101AWS
60
I_R = 10μA
SD101BWS
V_(BR)R
50
⎯
⎯
V I_R = 10μA
SD101CWS
40
I_R = 10μA
SD101AWS
SD101BWS
SD101CWS
SD101AWS
V_FM
⎯
SD101BWS
SD101CWS
0.41
I_F = 1.0mA
0.40
I_F = 1.0mA
⎯
0.39
1.00
V ^{IF = 1.0mA}
I_F = 15mA
0.95
I_F = 15mA
0.90
I_F = 15mA
SD101AWS
V_R = 50V
SD101BWS
I_RM
⎯
⎯
200
μA V_R = 40V
SD101CWS
V_R = 30V
SD101AWS
2.0
SD101BWS
C_T
⎯
⎯
2.1
pF V_R = 0V, f = 1.0MHz
SD101CWS
2.2
t_rr
⎯
⎯
1.0
ns
I_F = I_R = 5.0mA,
I_rr = 0.1 x I_R, R_L = 100Ω
Notes: 4. Short duration pulse test used to minimize self-heating effect.
100
10
T_A = 125ºC
T_A = 75ºC
T_A = 25ºC
10,000
1,000
100
10
1.0
T_A = 0ºC
0.1
0
T_A = -40ºC
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
1.8
1
0.1
0
10
20
30
40
50
60
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
250
1.6
f = 1.0MHz
1.4
200
1.2
150
1.0
0.8
100
0.6
0.4
50
0.2
0
0
0 5 10 15 20 25 30 35 40
0
V_R, DC REVERSE VOLTAGE (V)
Fig. 3 Total Capacitance vs. Reverse Voltage
SD101AWS – SD101CWS
Document number: DS30078 Rev. 11 - 2
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40
80
120
160
200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 4 Power Derating Curve
March 2010
© Diodes Incorporated