SBR2U10LP_15 Datasheet, PDF (2/4 Pages) Diodes Incorporated – 2A SBR® SURFACE MOUNT SUPER BARRIER RECTIFIER

Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current, 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
V_RRM
V_RWM
V_RM
I_O
I_FSM
SBR2U10LP
Value
Unit
10
V
2
A
21
A
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case (Note 6)
Thermal Resistance Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
R_θJC
R_θJA
T_J, T_STG
Value
55
210
-65 to +150
Unit
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Forward Voltage Drop (Note 7)
Leakage Current (Note 8)
Symbol Min
Typ
Max
Unit
V_F
—
0.40
0.46
V
—
0.5
2
mA
I_R
—
25
100
mA
Reverse Recovery Time
t_rr
—
43
60
ns
Junction Capacitance
C_j
—
102
—
pF
Notes:
6. Device mounted on FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.1"*0.15" copper pad.
7. It is recommended to electrically connect both Anode pins together during operation to achieve optimal performance.
8. Short duration pulse test used to minimize self-heating effect.
Test Condition
I_F = 2.0A, T_J = +25°C
V_R = 10V, T_J = +25°C
V_R = 10V, T_J = +125°C
I_F =10mA, I_rr = 0.1*I_RM,
R_L= 100Ω
V_R = 5V, f = 1.0MHz
1.8
1.6
Note 6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00
1
2
3
4
5
I_F(AV) AVERAGE RECTIFIED FORWARD CURRENT (A)
Figure 1 Forward Power Dissipation
1
T_A = 150°C
T_A = 125°C
0.1
T_A = 85°C
0.01
T_A = 25°C
T_A = -65°C
0.001
0
100
200
300
400
V_F, INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 2 Typical Forward Characteristics
SBR is a registered trademark of Diodes Incorporated.
SBR2U10LP
Document number:DS36572 Rev. 3 - 2
2 of 4
www.diodes.com
July 2014
© Diodes Incorporated