SBR1U40LP_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – 1.0A SBR® SUPER BARRIER RECTIFIER

SBR1U40LP
Maximum Ratings @T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage (Note 5)
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
40
V
V_RM
RMS Reverse Voltage
V_R(RMS)
28
V
Average Rectified Output Current (See Figure 1)
I_O
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I_FSM
5
A
Non-Repetitive Peak Forward Surge Current 15s
Single Half Sine-Wave Superimposed on Rated Load
I_FSM
2.6
A
Thermal Characteristics
Characteristic
Power Dissipation
Maximum Thermal Resistance Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
400
190
-65 to +150
Unit
mW
ºC/W
ºC
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Forward Voltage Drop
Leakage Current (Note 7)
Symbol Min
-
-
V_F
-
-
-
I_R
-
Notes:
5. V_RRM characteristic is base on 1mA leakage current test condition
6. Device mounted on Polymide substrate 1” x 1”, 2oz. Copper double sided PCB board.
7. Short duration pulse test used to minimize self-heating effect.
Typ
0.39
0.46
0.34
0.43
-
-
Max
0.42
0.49
0.37
0.47
50
100
Unit
V
μA
mA
Test Condition
I_F = 0.5A, T_J = 25ºC
I_F = 1.0A, T_J = 25ºC
I_F = 0.5A, T_J = 125ºC
I_F = 1.0A, T_J = 125ºC
V_R = 40V, T_J = 25ºC
V_R = 40V, T_J = 125ºC
0.7
1
0.6
T_A = 150°C
0.1 ^TA ^{= 125°C}
0.5
0.4
0.01
T_A = 85°C
0.3
T_A = 25°C
0.2
0.001
T_A = -55°C
0.1
0
0
0.5
1
1.5
I_F(AV), AVERAGE FORWARD CURRENT (A)
Fig. 1 Forward Power Dissipation
0.0001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
SBR is a registered trademark of Diodes Incorporated.
SBR1U40LP
Document number: DS31108 Rev. 13 - 2
2 of 5
www.diodes.com
February 2012
© Diodes Incorporated