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SBR160S23-7 Datasheet, PDF (2/4 Pages) Diodes Incorporated – 1A SBR® SUPER BARRIER RECTIFIER
SBR160S23
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
60
V
DC Blocking Voltage
VRM
Average Rectified Output Current
IO
900
mA
Average Peak Forward Current; D.C. = 50%
IFAV
1600
mA
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
15
A
Thermal Characteristics
Power Dissipation
Characteristic
Typical Thermal Resistance
Thermal Resistance Junction to Ambient Air (Note 3)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJA
TJ, TSTG
Value
500
305
271
-65 to +150
Unit
mW
ºC/W
ºC
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage (Per Diode)
Leakage Current (Note 5)
Total Capacitance
Reverse Recovery Time
Symbol
Min
Typ
Max
Unit
Test Condition
VR
60
-
-
V
IR = 300μA
VF
-
-
470
IF = 500mA
-
-
530
600
mV
IF = 750mA
IF = 1000mA
-
740
IF = 1500mA
IR
-
-
100
µA
VR = 45V, TJ = 25ºC
CT
-
19
-
pF
VR = 25V, f = 1MHz
trr
-
16
-
ns
IF = IR = 10mA, IRR = 0.1*IR
RL = 100Ω
Notes:
3. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
4. Part mounted on Polymide board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0
0.2
0.4
0.6
0.8
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 1 Forward Power Dissipation
10
1
0.1
TA = 125°C
0.01
0.001
TA = 25°C
0.0001
0
200
400
600
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics
SBR is a registered trademark of Diodes Incorporated.
SBR160S23
Document number: DS32269 Rev. 3 - 2
2 of 4
www.diodes.com
November 2010
© Diodes Incorporated