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S8NC_15 Datasheet, PDF (2/4 Pages) Diodes Incorporated – 8.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TT = +25°C
Non-Repetitive Peak Forward Surge Current, 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
Value
1200
850
8.0
225
S8NC
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance, Junction to Terminal (Note 5)
Operating and Storage Temperature Range
Symbol
RθJT
TJ, TSTG
Value
10.4
-65 to +150
Unit
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Symbol
V(BR)R
VF
Min
1200
—
Typ
—
0.98
0.885
Max
—
1.1
1.0
Unit
V
V
Leakage Current (Note 7)
IR
—
—
0.22
10
20
500
μA
Total Capacitance (Note 8)
CT
—
40
—
pF
Notes:
5. The device has two heat sinks of size 20mm * 70mm attached to each terminal (i.e. four heat sinks total).
6. Device mounted on FR-4 substrate, 0.4in. * 0.5in. 2oz single-sided, PC board with 0.2in. * 0.25in. copper pads.
7. Short duration pulse test used to minimize self-heating effect.
8. Measured at f = 1.0MHz and applied reverse voltage of VR=4.0V DC.
Test Condition
IR = 10μA
IF = 8.0A, TA = +25°C
IF = 8.0A, TA = +125°C
VR =1200V, TA = +25°C
VR =1200V, TA = +125°C
VR = 4V, f =1.0MHz
9
8
7
6
5
Note 5
4
3
2
Note 6
1
0
0
25
50
75
100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 1 Forward Current Derating
100
10
1
TA =150°C
TA =125°C
TA =100°C
TA = 85°C
0.1
TA = 25°C
TA = -55°C
0.01
0.4
0.6
0.8
1.0
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics
S8NC
Document number: DS36851 Rev. 3 - 2
2 of 4
www.diodes.com
December 2014
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