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PDS835L_10 Datasheet, PDF (2/5 Pages) Diodes Incorporated – 8A LOW VF SCHOTTKY BARRIER RECTIFIER
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Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See also figure 5)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
Value
35
25
8
120
PDS835L
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Soldering Point
Thermal Resistance Junction to Ambient Air (Note 3) TA = 25°C
Thermal Resistance Junction to Ambient Air (Note 4) TA = 25°C
Thermal Resistance Junction to Ambient Air (Note 5) TA = 25°C
Operating Temperature Range
Storage Temperature Range
Symbol
RθJS
RθJA
RθJA
RθJA
TJ
TSTG
Typ
Max
⎯
3.0
100
⎯
65
⎯
45
⎯
-65 to +125
-65 to +150
Unit
°C/W
°C/W
°C/W
°C/W
°C
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Reverse Leakage Current (Note 6)
Symbol
Min
Typ
Max Unit
V(BR)R
VF
35
⎯
⎯
V
⎯
⎯
0.46 0.51
⎯
0.41
V
IR
⎯
⎯
0.05
1.4
7
35
mA
Notes:
3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com
4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
5. Polymide PCB, 2 oz. Copper. Cathode pad dimensions 9.4mm x 7.2mm. Anode pad dimensions 2.7mm x 1.6mm.
6. Short duration pulse test used to minimize self-heating effect.
Test Condition
IR = 1mA
IF = 8A, TS = 25°C
IF = 8A, TS = 125°C
TS = 25°C, VR = 35V
TS = 100°C, VR = 35V
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 1 Forward Power Dissipation
PowerDI is a registered trademark of Diodes Incorporated.
PDS835L
Document number: DS30488 Rev. 10 - 2
2 of 5
www.diodes.com
0 0.1 0.2 0.3 0.4 0.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
December 2010
© Diodes Incorporated
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