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PDS3100_10 Datasheet, PDF (2/5 Pages) Diodes Incorporated – 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
PDS3100
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (see also Figure 5)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
Value
100
70
3
90
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Soldering Point
Thermal Resistance Junction to Ambient Air (Note 3) TA = 25°C
Thermal Resistance Junction to Ambient Air (Note 4) TA = 25°C
Thermal Resistance Junction to Ambient Air (Note 5) TA = 25°C
Operating Temperature Range
Storage Temperature Range
Symbol
RθJS
RθJA
RθJA
RθJA
TJ
TSTG
Typ
Max
⎯
6.0
95
⎯
70
⎯
50
⎯
-65 to +150
-65 to +175
Unit
°C/W
°C/W
°C/W
°C/W
°C
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Reverse Current (Note 6)
Symbol
V(BR)R
VF
IR
Min
Typ
Max
100
⎯
⎯
⎯
0.71 0.76
⎯
0.61 0.65
⎯
0.57 0.61
⎯
0.78 0.84
⎯
0.68 0.75
⎯
0.64 0.68
⎯
2
100
⎯
0.4
5
⎯
2
20
Notes:
3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
5. Polymide PCB, 2 oz. Copper. Cathode pad dimensions 9.4mm x 7.2mm. Anode pad dimensions 2.7mm x 1.6mm.
6. Short duration pulse test used to minimize self-heating effect.
Unit
V
V
μA
mA
mA
Test Condition
IR = 0.2mA
IF = 3A, TJ = 25°C
IF = 3A, TJ = 100°C
IF = 3A, TJ = 125°C
IF = 6A, TJ = 25°C
IF = 6A, TJ = 100°C
IF = 6A, TJ = 125°C
TJ = 25°C, VR = 100V
TJ = 100°C, VR = 100V
TJ = 125°C, VR = 100V
PowerDI is a registered trademark of Diodes Incorporated.
PDS3100
Document number: DS30487 Rev. 11 - 2
2 of 5
www.diodes.com
December 2010
© Diodes Incorporated