PD3S140_15 Datasheet, PDF (2/4 Pages) Diodes Incorporated – 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI®

PD3S140
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
V_RRM
Working Peak Reverse Voltage
DC Blocking Voltage
V_RWM
40
V
V_R
Average Forward Current (See also figure 4)
I_F(AV)
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
I_FSM
22
A
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Soldering Point
Thermal Resistance Junction to Ambient Air (Note 5)
Thermal Resistance Junction to Ambient Air (Note 6)
Operating and Storage Temperature Range
Symbol
R_θJS
R_θJA
R_θJA
T_J, T_STG
Typ
Max
⎯
15
175
⎯
130
⎯
-65 to +150
Unit
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Leakage Current (Note 7)
Total Capacitance (See also figure 3)
Symbol Min
V_(BR)R
40
⎯
⎯
V_F
⎯
⎯
⎯
I_R
⎯
C_T
⎯
Typ
⎯
0.37
0.44
0.46
0.49
0.3
2
32
Max
⎯
0.42
0.50
0.52
0.55
4
50
⎯
Notes:
5. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com. T_A = +25°C.
6. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com. T_A = +25°C.
7. Short duration pulse test used to minimize self-heating effect.
Unit
V
V
μA
pF
Test Condition
I_R = 100μA
I_F = 0.1A
I_F = 0.5A
I_F = 0.7A
I_F = 1.0A
V_R = 5V, T_A = +25°C
V_R = 40V, T_A = +25°C
V_R = 10V, f = 1.0MHz
1.25
1.0
I_PK
I_AV
=
1
(
D
C
)
0.75
10
1
100m
0.50
10m
0.25
0
0
0.5
1.0
1.5
2.0
2.5
I_F(AV), AVERAGE FORWARD CURRENT (A)
Fig. 1 Forward Power Dissipation
1m
100μ
0
0.2
0.4
0.6
0.8
1.0
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
POWERDI is a registered trademark of Diodes Incorporated.
PD3S140
Document number: DS30862 Rev. 12 - 2
2 of 4
www.diodes.com
October 2012
© Diodes Incorporated