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MMDT5551_15 Datasheet, PDF (2/4 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – Multi-Chip TRANSISTOR
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
180
160
6.0
Collector Cutoff Current
ICBO
⎯
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
IEBO
⎯
80
hFE
80
30
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
VBE(SAT)
⎯
Cobo
⎯
hfe
50
fT
100
NF
⎯
Notes: 6. Short duration pulse test used to minimize self-heating effect.
Max
⎯
⎯
⎯
50
50
⎯
250
⎯
0.15
0.20
1.0
6.0
250
300
8.0
Unit
Test Condition
V IC = 100μA, IE = 0
V IC = 1.0mA, IB = 0
V IE = 10μA, IC = 0
nA VCB = 120V, IE = 0
μA VCB = 120V, IE = 0, TA = 100°C
nA VEB = 4.0V, IC = 0
IC = 1.0mA, VCE = 5.0V
⎯ IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
pF
⎯
MHz
dB
VCB = 10V, f = 1.0MHz, IE = 0
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 10V, IC = 10mA, f = 100MHz
VCE = 5.0V, IC = 200μA,
RS = 1.0kΩ, f = 1.0kHz
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
0.15
0.14
0.13
IC
IB
=
10
0.12
0.11
TA = 150°C
0.10
0.09
0.08
0.07
0.06
TA = 25°C
0.05
0.04
1
TA = -50°C
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
DS30172 Rev. 8 - 2
2 of 4
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MMDT5551
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