MMDT5451_1 Datasheet, PDF (2/5 Pages) Diodes Incorporated – COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics, NPN 5551 Section ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol Min
V_(BR)CBO
180
V(BR)CEO
160
V(BR)EBO
6.0
I_CBO
¾
I_EBO
¾
80
h_FE
80
30
V_CE(SAT)
¾
V_BE(SAT)
¾
C_obo
¾
h_fe
50
f_T
100
NF
¾
Max
¾
¾
¾
50
50
¾
250
¾
0.15
0.20
1.0
6.0
250
300
8.0
Unit
Test Condition
V
IC = 100mA, IE = 0
V
IC = 1.0mA, IB = 0
V
I_E = 10mA, I_C = 0
nA
V_CB = 120V, I_E = 0
mA
V_CB = 120V, I_E = 0, T_A = 100°C
nA
VEB = 4.0V, IC = 0
IC = 1.0mA, VCE = 5.0V
¾
I_C = 10mA, V_CE = 5.0V
I_C = 50mA, V_CE = 5.0V
V
IC = 10mA, IB = 1.0mA
I_C = 50mA, I_B = 5.0mA
V
IC = 10mA, IB = 1.0mA
I_C = 50mA, I_B = 5.0mA
pF
¾
MHz
dB
VCB = 10V, f = 1.0MHz, IE = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 10mA,
f = 100MHz
V_CE = 5.0V, I_C = 200mA,
R_S = 1.0kW, f = 1.0kHz
Electrical Characteristics, PNP 5401 Section ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol Min
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
-160
-150
-5.0
¾
¾
50
h_FE
60
50
V_CE(SAT)
¾
V_BE(SAT)
¾
C_obo
¾
h_fe
40
f_T
100
NF
¾
Max
¾
¾
¾
-50
-50
¾
240
¾
-0.2
-0.5
-1.0
6.0
200
300
8.0
Unit
Test Condition
V
I_C = -100mA, I_E = 0
V
IC = -1.0mA, IB = 0
V
I_E = -10mA, I_C = 0
nA
V_CB = -120V, I_E = 0
mA
V_CB = -120V, I_E = 0, T_A = 100°C
nA
VEB = -3.0V, IC = 0
IC = -1.0mA, VCE = -5.0V
¾
I_C = -10mA, V_CE = -5.0V
I_C = -50mA, V_CE = -5.0V
V
IC = -10mA, IB = -1.0mA
I_C = -50mA, I_B = -5.0mA
V
IC = -10mA, IB = -1.0mA
I_C = -50mA, I_B = -5.0mA
pF
¾
MHz
dB
VCB = -10V, f = 1.0MHz, IE = 0
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
VCE = -10V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -200mA,
R_S = 10W, f = 1.0kHz
Notes: 4. Short duration test pulse used to minimize self-heating effect.
DS30171 Rev. 8 - 2
2 of 5
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MMDT5451