MMDT5401_2 Datasheet, PDF (2/4 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol Min
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
-160
-150
-5.0
Collector Cutoff Current
I_CBO
⎯
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
I_EBO
⎯
50
h_FE
60
50
Collector-Emitter Saturation Voltage
V_CE(SAT)
⎯
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
V_BE(SAT)
⎯
C_obo
⎯
h_fe
40
f_T
100
NF
⎯
Notes: 6. Short duration pulse test used to minimize self-heating effect.
Max
⎯
⎯
⎯
-50
-50
⎯
240
⎯
-0.2
-0.5
-1.0
6.0
200
300
8.0
Unit
Test Condition
V I_C = -100μA, I_E = 0
V I_C = -1.0mA, I_B = 0
V I_E = -10μA, I_C = 0
nA V_CB = -120V, I_E = 0
μA V_CB = -120V, I_E = 0, T_A = 100°C
nA V_EB = -3.0V, I_C = 0
I_C = -1.0mA, V_CE = -5.0V
⎯ I_C = -10mA, V_CE = -5.0V
I_C = -50mA, V_CE = -5.0V
V ^{IC = -10mA, IB = -1.0mA}
I_C = -50mA, I_B = -5.0mA
V ^{IC = -10mA, IB = -1.0mA}
I_C = -50mA, I_B = -5.0mA
pF
⎯
MHz
dB
V_CB = -10V, f = 1.0MHz, I_E = 0
V_CE = -10V, I_C = -1.0mA,
f = 1.0kHz
V_CE = -10V, I_C = -10mA, f = 100MHz
V_CE = -5.0V, I_C = -200μA,
R_S = 10Ω, f = 1.0kHz
200
150
100
50
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
10.0
I_C
I_B ^{= 10}
1.0
T_A = 150°C
0.1
T_A = -50°C
0.01
1
T_A = 25°C
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
DS30169 Rev. 9 - 2
2 of 4
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MMDT5401
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