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MMDT4413_2 Datasheet, PDF (2/6 Pages) Diodes Incorporated – COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Electrical Characteristics, NPN 4401 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
hFE
VCE(SAT)
VBE(SAT)
Ccb
Ceb
hie
hre
hfe
hoe
fT
Min
60
40
6.0
⎯
⎯
20
40
80
100
40
⎯
0.75
⎯
⎯
⎯
1.0
0.1
40
1.0
250
td
⎯
tr
⎯
ts
⎯
tf
⎯
Max
⎯
⎯
⎯
100
100
⎯
⎯
⎯
300
⎯
0.40
0.75
0.95
1.2
6.5
30
15
8.0
500
30
⎯
15
20
225
30
Unit
Test Condition
V
IC = 100μA, IE = 0
V
IC = 1.0mA, IB = 0
V
IE = 100μA, IC = 0
nA
VCE = 35V, VEB(OFF) = 0.4V
nA
VCE = 35V, VEB(OFF) = 0.4V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
⎯
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
pF
pF
kΩ
x 10-4
⎯
μS
MHz
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 10V, IC = 20mA,
f = 100MHz
ns
VCC = 30V, IC = 150mA,
ns
VBE(off) = 2.0V, IB1 = 15mA
ns
VCC = 30V, IC = 150mA,
ns
IB1 = IB2 = 15mA
Notes: 6.
Short duration pulse test used to minimize self-heating effect.
DS30121 Rev. 10 - 2
2 of 6
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MMDT4413
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