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MMDT4413 Datasheet, PDF (2/4 Pages) Transys Electronics – COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Electrical Characteristics, NPN 4401 Section
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 3)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCE(SAT)
VBE(SAT)
Ccb
Ceb
hie
hre
hfe
hoe
fT
td
tr
ts
tf
@ TA = 25°C unless otherwise specified
Min
Max
Unit
Test Condition
60
¾
V
IC = 100mA, IE = 0
40
¾
V
IC = 1.0mA, IB = 0
6.0
¾
V
IE = 100mA, IC = 0
¾
100
nA
VCE = 35V, VEB(OFF) = 0.4V
¾
100
nA
VCE = 35V, VEB(OFF) = 0.4V
20
¾
40
¾
80
¾
100
300
40
¾
¾
0.40
0.75
0.75
0.95
¾
1.2
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
¾
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
¾
6.5
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
¾
30
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
1.0
15
kW
0.1
8.0
x 10-4 VCE = 10V, IC = 1.0mA,
40
500
¾
f = 1.0kHz
1.0
30
mS
250
¾
MHz
VCE = 10V, IC = 20mA,
f = 100MHz
¾
15
ns
VCC = 30V, IC = 150mA,
¾
20
ns
VBE(off) = 2.0V, IB1 = 15mA
¾
225
ns
VCC = 30V, IC = 150mA,
¾
30
ns
IB1 = IB2 = 15mA
Notes: 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30121 Rev. 3P-1
2 of 4
MMDT4413