MMDT4146_1 Datasheet, PDF (2/5 Pages) Diodes Incorporated – COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics, NPN 4124 Section ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Symbol Min
V(BR)CBO
30
V(BR)CEO
25
V_(BR)EBO
5.0
I_CBO
¾
I_EBO
¾
h_FE
120
60
V_CE(SAT)
¾
V_BE(SAT)
¾
C_obo
¾
C_ibo
¾
h_fe
120
f_T
300
Max
¾
¾
6.0
50
50
360
¾
0.30
0.95
4.0
8.0
480
¾
Unit
Test Condition
V
I_C = 10mA, I_E = 0
V
IC = 1.0mA, IB = 0
V
I_E = 10mA, I_C = 0
nA
VCB = 20V, IE = 0V
nA
VEB = 3.0V, IC = 0V
¾
IC = 2.0mA, VCE = 1.0V
I_C = 50mA, V_CE = 1.0V
V
IC = 50mA, IB = 5.0mA
V
IC = 50mA, IB = 5.0mA
pF
pF
¾
MHz
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 1.0V, IC = 2.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
Electrical Characteristics, PNP 4126 Section ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Symbol Min
V_(BR)CBO
V(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
-25
-25
-4.0
¾
¾
h_FE
120
60
V_CE(SAT)
¾
V_BE(SAT)
¾
C_obo
¾
C_ibo
¾
h_fe
120
fT
250
NF
¾
Max
¾
¾
¾
-50
-50
360
¾
-0.40
-0.95
4.5
10
480
¾
4.0
Unit
Test Condition
V
I_C = -10mA, I_E = 0
V
IC = -1.0mA, IB = 0
V
I_E = -10mA, I_C = 0
nA
VCB = -20V, IE = 0V
nA
VEB = -3.0V, IC = 0V
¾
IC = -2.0mA, VCE = -1.0V
I_C = -50mA, V_CE = -1.0V
V
IC = -50mA, IB = -5.0mA
V
IC = -50mA, IB = -5.0mA
pF
pF
¾
MHz
dB
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = -1.0V, IC = -2.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -100mA,
R_S = 1.0kW, f = 1.0kHz
Ordering Information ^{(Note 5)}
Device
MMDT4146-7-F
Packaging
SOT-363
Notes: 4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Shipping
3000/Tape & Reel
DS30162 Rev. 9 - 2
2 of 5
www.diodes.com
MMDT4146