MMDT4126_15 Datasheet, PDF (2/4 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Symbol Min
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
-25
-25
-4.0
⎯
⎯
h_FE
V_CE(SAT)
V_BE(SAT)
120
60
⎯
⎯
C_obo
⎯
C_ibo
⎯
Small Signal Current Gain
h_fe
120
Current Gain-Bandwidth Product
f_T
250
Noise Figure
NF
⎯
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Max
⎯
⎯
⎯
-50
-50
360
⎯
-0.40
-0.95
4.5
10
480
⎯
4.0
Unit
Test Condition
V I_C = -10μA, I_E = 0
V I_C = -1.0mA, I_B = 0
V I_E = -10μA, I_C = 0
nA V_CB = -20V, I_E = 0V
nA V_EB = -3.0V, I_C = 0V
⎯ ^{IC = -2.0mA, VCE = -1.0V}
I_C = -50mA, V_CE = -1.0V
V I_C = -50mA, I_B = -5.0mA
V I_C = -50mA, I_B = -5.0mA
pF
pF
⎯
MHz
dB
V_CB = -5.0V, f = 1.0MHz, I_E = 0
V_EB = -0.5V, f = 1.0MHz, I_C = 0
V_CE = -1.0V, I_C = -2.0mA,
f = 1.0kHz
V_CE = -20V, I_C = -10mA,
f = 100MHz
V_CE = -5.0V, I_C = -100μA,
R_S = 1.0kΩ, f = 1.0kHz
350
300
250
200
150
100
50
0 _{0 25 50 75 100 125 150 175 200}
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
100
10
1
0.1
1
10
100
V_CB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
DS30160 Rev. 9 - 2
2 of 4
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MMDT4126
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