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MMDT4126 Datasheet, PDF (2/2 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Symbol Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
-25
-25
-4.0
¾
¾
hFE
VCE(SAT)
VBE(SAT)
120
60
¾
¾
Cobo
¾
Cibo
¾
hfe
120
Current Gain-Bandwidth Product
fT
250
Noise Figure
NF
¾
Max
¾
¾
¾
-50
-50
360
¾
-0.40
-0.95
4.5
10
480
¾
4.0
Notes: 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
Unit
Test Condition
V
IC = -10mA, IE = 0
V
IC = -1.0mA, IB = 0
V
IE = -10mA, IC = 0
nA
VCB = -20V, IE = 0V
nA
VEB = -3.0V, IC = 0V
¾
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
V
IC = -50mA, IB = -5.0mA
V
IC = -50mA, IB = -5.0mA
pF
pF
¾
MHz
dB
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = -1.0V, IC = -2.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -100mA,
RS = 1.0kW, f = 1.0kHz
DS30160 Rev. D-1
2 of 2
MMDT4126