MMDT3946_2 Datasheet, PDF (2/5 Pages) Diodes Incorporated – COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics, NPN 3904 Section @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol Min
V_(BR)CBO
60
V_(BR)CEO
40
V_(BR)EBO
5.0
I_CEX
⎯
I_BL
⎯
40
70
h_FE
100
60
30
V_CE(SAT)
V_BE(SAT)
⎯
0.65
⎯
C_obo
⎯
C_ibo
⎯
h_ie
1.0
h_re
0.5
h_fe
100
h_oe
1.0
f_T
300
NF
⎯
t_d
⎯
t_r
⎯
t_s
⎯
t_f
⎯
Max
Unit
Test Condition
⎯
V I_C = 10μA, I_E = 0
⎯
V I_C = 1.0mA, I_B = 0
6.0
V I_E = 10μA, I_C = 0
50
nA V_CE = 30V, V_EB(OFF) = 3.0V
50
nA V_CE = 30V, V_EB(OFF) = 3.0V
⎯
⎯
300
⎯
⎯
0.20
0.30
0.85
0.95
I_C = 100µA, V_CE = 1.0V
I_C = 1.0mA, V_CE = 1.0V
⎯ ^{IC = 10mA, VCE = 1.0V}
I_C = 50mA, V_CE = 1.0V
I_C = 100mA, V_CE = 1.0V
V ^{IC = 10mA, IB = 1.0mA}
I_C = 50mA, I_B = 5.0mA
V ^{IC = 10mA, IB = 1.0mA}
I_C = 50mA, I_B = 5.0mA
4.0
pF V_CB = 5.0V, f = 1.0MHz, I_E = 0
8.0
pF V_EB = 0.5V, f = 1.0MHz, I_C = 0
10
kΩ
8.0
x 10^-4 _{VCE = 10V, IC = 1.0mA,}
400
⎯ ^{f = 1.0kHz}
40
μS
⎯
MHz
V_CE = 20V, I_C = 20mA,
f = 100MHz
5.0
dB ^{VCE = 5.0V, IC = 100μA,}
R_S = 1.0kΩ, f = 1.0kHz
35
ns _{VCC = 3.0V, IC = 10mA,}
35
ns ^VBE(off) ^{= - 0.5V, I}B1 ^{= 1.0mA}
200
ns _{VCC = 3.0V, IC = 10mA,}
50
ns ^IB1 ^{= I}B2 ^{= 1.0mA}
Notes: 6. Short duration pulse test used to minimize self-heating effect.
DS30123 Rev. 10 - 2
2 of 5
www.diodes.com
MMDT3946
© Diodes Incorporated