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MMDT3946LP4 Datasheet, PDF (2/5 Pages) Diodes Incorporated – COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS
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Electrical Characteristics, NPN 3904 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
hFE
VCE(SAT)
VBE(SAT)
Cobo
fT
td
tr
ts
tf
Min
60
40
6.0
⎯
⎯
40
70
100
60
30
⎯
0.65
⎯
⎯
300
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
50
50
⎯
⎯
300
⎯
⎯
0.20
0.30
0.85
0.95
4.0
⎯
35
35
200
50
Unit
V
V
V
nA
nA
⎯
V
V
pF
MHz
ns
ns
ns
ns
Test Condition
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VCE = 20V, IC = 20mA,
f = 100MHz
VCC = 3.0V, IC = 10mA,
VBE(off) = -0.5V, IB1 = 1.0mA
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
Electrical Characteristics, PNP 3906 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Symbol
Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
-40
-40
-5.0
⎯
⎯
60
80
hFE
100
60
30
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VBE(SAT)
Cobo
-0.65
⎯
⎯
Current Gain-Bandwidth Product
fT
250
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
⎯
tr
⎯
ts
⎯
tf
⎯
Notes: 5. Short duration test pulse used to minimize self-heating effect.
Max
⎯
⎯
⎯
-50
-50
⎯
⎯
300
⎯
⎯
-0.25
-0.40
-0.85
-0.95
4.5
⎯
35
35
225
75
Unit
V
V
V
nA
nA
⎯
V
V
pF
MHz
ns
ns
ns
ns
Test Condition
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
VCE = -30V, VEB(OFF) = -3.0V
VCE = -30V, VEB(OFF) = -3.0V
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
VCB = -5.0V, f = 1.0MHz, IE = 0
VCE = -20V, IC = -10mA,
f = 100MHz
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
DS30822 Rev. 4 - 2
2 of 5
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