MMDT3906_2 Datasheet, PDF (2/4 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
Symbol Min
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CEX
I_BL
-40
-40
-5.0
⎯
⎯
DC Current Gain
60
80
h_FE
100
60
30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
V_CE(SAT)
V_BE(SAT)
⎯
-0.65
⎯
C_obo
⎯
C_ibo
⎯
h_ie
2.0
h_re
0.1
h_fe
100
h_oe
3.0
f_T
250
Noise Figure
NF
⎯
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t_d
⎯
t_r
⎯
t_s
⎯
t_f
⎯
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Max
⎯
⎯
⎯
-50
-50
⎯
⎯
300
⎯
⎯
-0.25
-0.40
-0.85
-0.95
4.5
10
12
10
400
60
⎯
4.0
35
35
225
75
Unit
Test Condition
V I_C = -10μA, I_E = 0
V I_C = -1.0mA, I_B = 0
V I_E = -10μA, I_C = 0
nA V_CE = -30V, V_EB(OFF) = -3.0V
nA V_CE = -30V, V_EB(OFF) = -3.0V
I_C = -100µA, V_CE = -1.0V
I_C = -1.0mA, V_CE = -1.0V
⎯ ^{IC = -10mA, VCE = -1.0V}
I_C = -50mA, V_CE = -1.0V
I_C = -100mA, V_CE = -1.0V
V ^{IC = -10mA, IB = -1.0mA}
I_C = -50mA, I_B = -5.0mA
V ^{IC = -10mA, IB = -1.0mA}
I_C = -50mA, I_B = -5.0mA
pF
pF
kΩ
x 10^-4
⎯
μS
MHz
dB
V_CB = -5.0V, f = 1.0MHz, I_E = 0
V_EB = -0.5V, f = 1.0MHz, I_C = 0
V_CE = 10V, I_C = 1.0mA,
f = 1.0kHz
V_CE = -20V, I_C = -10mA,
f = 100MHz
V_CE = -5.0V, I_C = -100μA,
R_S = 1.0kΩ, f = 1.0kHz
ns _{VCC = -3.0V, IC = -10mA,}
ns ^VBE(off) ^{= 0.5V, I}B1 ^{= -1.0mA}
ns _{VCC = -3.0V, IC = -10mA,}
ns ^IB1 ^{= I}B2 ^{= -1.0mA}
DS30124 Rev. 11 - 2
2 of 4
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MMDT3906
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