MMDT3906V Datasheet, PDF (2/4 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Symbol
V_(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
I_BL
h_FE
Collector-Emitter Saturation Voltage
V_CE(SAT)
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
V_BE(SAT)
C_obo
C_ibo
h_ie
h_re
h_fe
h_oe
fT
Noise Figure
NF
SWITCHING CHARACTERISTICS
Delay Time
t_d
Rise Time
t_r
Storage Time
t_s
Fall Time
t_f
Notes: 4. Short duration test pulse used to minimize self-heating.
Min
-40
-40
-5.0
¾
¾
60
80
100
60
30
¾
-0.65
¾
¾
¾
2.0
0.1
100
3.0
250
¾
¾
¾
¾
¾
Max
¾
¾
¾
-50
-50
¾
¾
300
¾
¾
-0.25
-0.40
-0.85
-0.95
4.5
10
12
10
400
60
¾
4.0
35
35
225
75
Unit
Test Condition
V
I_C = -10mA, I_E = 0
V
IC = -1.0mA, IB = 0
V
I_E = -10mA, I_C = 0
nA
VCE = -30V, VEB(OFF) = -3.0V
nA
VCE = -30V, VEB(OFF) = -3.0V
I_C = -100µA, V_CE = -1.0V
I_C = -1.0mA, V_CE = -1.0V
¾
I_C = -10mA, V_CE = -1.0V
I_C = -50mA, V_CE = -1.0V
I_C = -100mA, V_CE = -1.0V
V
IC = -10mA, IB = -1.0mA
I_C = -50mA, I_B = -5.0mA
V
IC = -10mA, IB = -1.0mA
I_C = -50mA, I_B = -5.0mA
pF
pF
kW
x 10^-4
¾
mS
MHz
dB
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
V_CE = 10V, I_C = 1.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -100mA,
R_S = 1.0kW, f = 1.0kHz
ns
VCC = -3.0V, IC = -10mA,
ns
V_BE(off) = 0.5V, I_B1 = -1.0mA
ns
VCC = -3.0V, IC = -10mA,
ns
I_B1 = I_B2 = -1.0mA
DS30467 Rev. 6 - 2
2 of 4
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MMDT3906V