MMDT3904_15 Datasheet, PDF (2/5 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

MMDT3904
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
60
40
6.0
200
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage and Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
ESD Ratings (Note 6)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
≥ 4,000
≥ 400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Symbol Min
BVCBO
60
BVCEO
40
BVEBO
6.0
ICBO

Collector-Emitter Cutoff Current
ICEV

Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 7)
DC Current Gain
IEBO

40
70
hFE
100
60
30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
VCE(sat)
VBE(sat)

0.65

Cobo

Cibo

hie
1.0
hre
0.5
hfe
100
hoe
1.0
fT
300
Noise Figure
NF

SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td

tr

ts

tf

Note:
7. Short duration pulse test used to minimize self-heating effect.
MMDT3904
Document number: DS30088 Rev. 16 - 2
2 of 5
www.diodes.com
Max



50
50
50
50


300


0.20
0.30
0.85
0.95
4.0
8.0
10
8.0
400
40

5.0
35
35
200
50
Unit
Test Condition
V I_C = 100µA, I_E = 0
V I_C = 10.0mA, I_B = 0
V I_E = 100µA, I_C = 0
nA V_CB = 50V
nA ^{VCE = 40V, VBE(OFF) = 3.0V}
VCE = 40V, VBE(ON) = 0.25V
nA V_EB = 5V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
 ^{IC = 10mA, VCE = 1.0V}
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
V ^{IC = 10mA, IB = 1.0mA}
IC = 50mA, IB = 5.0mA
V ^{IC = 10mA, IB = 1.0mA}
IC = 50mA, IB = 5.0mA
pF
pF
kΩ
x 10^-4

µS
MHz
dB
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
VCE = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
ns V_CC = 3.0V, I_C = 10mA,
ns V_BE(off) = - 0.5V, I_B1 = 1.0mA
ns V_CC = 3.0V, I_C = 10mA,
ns I_B1 = I_B2 = 1.0mA
July 2014
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