MMDT3904S Datasheet, PDF (2/2 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Symbol Min
V_(BR)CBO
60
V_(BR)CEO
40
V_(BR)EBO
5.0
ICEX
¾
I_BL
¾
h_FE
V_CE(SAT)
V_BE(SAT)
40
70
100
60
30
¾
0.65
¾
C_obo
¾
C_ibo
¾
h_ie
1.0
h_re
0.5
h_fe
100
h_oe
1.0
fT
300
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
NF
¾
t_d
¾
t_r
¾
t_s
¾
t_f
¾
Max
¾
¾
¾
50
50
¾
¾
300
¾
¾
0.20
0.30
0.85
0.95
4.0
8.0
10
8.0
400
40
¾
5.0
35
35
200
50
Unit
Test Condition
V
I_C = 10mA, I_E = 0
V
IC = 1.0mA, IB = 0
V
I_E = 10mA, I_C = 0
nA
VCE = 30V, VEB(OFF) = 3.0V
nA
VCE = 30V, VEB(OFF) = 3.0V
I_C = 100µA, V_CE = 1.0V
I_C = 1.0mA, V_CE = 1.0V
¾
I_C = 10mA, V_CE = 1.0V
I_C = 50mA, V_CE = 1.0V
I_C = 100mA, V_CE = 1.0V
V
IC = 10mA, IB = 1.0mA
I_C = 50mA, I_B = 5.0mA
V
IC = 10mA, IB = 1.0mA
I_C = 50mA, I_B = 5.0mA
pF
pF
kW
x 10^-4
¾
mS
MHz
dB
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
V_CE = 10V, I_C = 1.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
VCE = 5.0V, IC = 100mA,
R_S = 1.0kW, f = 1.0kHz
ns
VCC = 3.0V, IC = 10mA,
ns
V_BE(off) = - 0.5V, I_B1 = 1.0mA
ns
VCC = 3.0V, IC = 10mA,
ns
I_B1 = I_B2 = 1.0mA
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30192 Rev. 2P-5
2 of 2
MMDT3904S