MMDT2907V_15 Datasheet, PDF (2/4 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Symbol Min
V_(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
I_CEX
I_BL
-60
-60
-5.0
¾
¾
¾
75
100
h_FE
100
100
50
V_CE(SAT)
¾
V_BE(SAT)
¾
C_obo
¾
C_ibo
—
fT
200
Max
¾
¾
¾
-10
-50
-50
¾
¾
¾
300
¾
-0.4
-1.6
-1.3
-2.6
8.0
30
¾
t_off
¾
45
t_d
¾
10
t_r
¾
40
t_off
¾
100
Notes: 4. Short duration test pulse used to minimize self-heating effect.
Unit
Test Condition
V
I_C = -10mA, I_E = 0
V
IC = -10mA, IB = 0
V
I_E = -10mA, I_C = 0
nA
V_CB = -50V, I_E = 0
mA
V_CB = -50V, I_E = 0, T_A = 125°C
nA
VCE = -30V, VEB(OFF) = -0.5V
nA
VCE = -30V, VEB(OFF) = -0.5V
I_C = -100µA, V_CE = -10V
I_C = -1.0mA, V_CE = -10V
¾
I_C = -10mA, V_CE = -10V
I_C = -150mA, V_CE = -10V
I_C = -500mA, V_CE = -10V
V
IC = -150mA, IB = -15mA
I_C = -500mA, I_B = -50mA
V
IC = 150mA, IB = 15mA
I_C = 500mA, I_B = 50mA
pF
pF
MHz
VCB = -10V, f = 1.0MHz, IE = 0
VEB = -2.0V, f = 1.0MHz, IC = 0
VCE = -20V, IC = -50mA,
f = 100MHz
ns
ns
VCC = -30V, IC = -150mA,
ns
I_B1 = -15mA
ns
DS30564 Rev. 4 - 2
2 of 4
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MMDT2907V