MMDT2907A_15 Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor

Absolute Maximum Ratings (@T_A = +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
-60
-60
-5.0
-600
MMDT2907A
Unit
V
V
V
mA
Thermal Characteristics (@T_A = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 6)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
200
625
-55 to +150
Unit
mW
C/W
C
Electrical Characteristics (@T_A = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 7)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off TIme
Storage Time
Fall Time
Symbol
Min
Typ
Max Unit Test Condition
BV_CBO
-60
—
—
V I_C = -10µA, I_B = 0
BV_CEO
-60
—
—
V I_C = -10mA, I_B = 0
BV_EBO
-5
—
—
V I_E = -10µA, I_C = 0
I_CBO
—
—
—
-10
nA VCB = -50V, IE = 0
—
-10
µA V_CB = -50V, I_E = 0, T_A = +125°C
I_CEX
—
—
-50
nA V_CE = -30V, V_EB(OFF) = -0.5V
I_BL
—
—
-50
nA V_CE = -30V, V_EB(OFF) = -0.5V
75
—
—
I_C = -100µA ,V_CE = -10V
100
—
—
I_C = -1.0mA, V_CE = -10V
h_FE
100
—
—
— I_C = -10mA, V_CE = -10V
100
—
300
I_C = -150mA, V_CE = -10V
50
—
—
I_C = -500mA, V_CE = -10V
V_CE(sat)
—
—
-0.4
-1.6
V
I_C = -150mA, I_B = -15mA
I_C = -500mA, I_B = -50mA
V_BE(sat)
—
—
-1.3
-2.6
V
I_C = 150mA, I_B = 15mA
I_C = 500mA, I_B = 50mA
C_OBO
—
—
8.0
pF V_CB = -10V, f = 1.0MHz, I_E = 0
C_IBO
—
—
30
pF V_EB = -2.0V, f = 1.0MHz, I_C = 0
f_T
200
—
—
MHz
V_CE = -20V, I_C = -50mA,
f = 100MHz
t_off
t_d
t_r
—
—
—
—
—
—
45
ns
10
40
ns
ns
V_CC = -30V, I_C = -150 mA,
I_B1 = -15mA
t_off
t_s
t_f
—
—
—
—
100
ns
—
—
80
30
ns
ns
V_CC = -6V, I_C = -150 mA,
I_B1 = -I_B2 = -15mA
Notes:
6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
7. Short duration pulse test used to minimize self-heating effect.
MMDT2907A
Datasheet Number DS30109 Rev.14 - 2
2 of 5
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March 2014
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