MMDT2907A_1 Datasheet, PDF (2/4 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Symbol Min
V_(BR)CBO
-60
V_(BR)CEO
-60
V_(BR)EBO
-5.0
I_CBO
⎯
I_CEX
⎯
I_BL
⎯
75
100
h_FE
100
100
50
V_CE(SAT)
⎯
V_BE(SAT)
⎯
C_obo
⎯
C_ibo
—
f_T
200
t_off
⎯
t_d
⎯
t_r
⎯
t_off
⎯
t_s
⎯
t_f
⎯
Max
⎯
⎯
⎯
-10
-50
-50
⎯
⎯
⎯
300
⎯
-0.4
-1.6
-1.3
-2.6
8.0
30
⎯
45
10
40
100
80
30
Unit
Test Condition
V
I_C = -10μA, I_E = 0
V
I_C = -10mA, I_BB = 0
V
I_E = -10μA, I_C = 0
nA V_CB = -50V, I_E = 0
μA _{VCB = -50V, IE = 0, TA = 125°C}
nA V_CE = -30V, V_EB(OFF) = -0.5V
nA V_CE = -30V, V_EB(OFF) = -0.5V
I_C = -100µA, V_CE = -10V
I_C = -1.0mA, V_CE = -10V
⎯ I_C = -10mA, V_CE = -10V
I_C = -150mA, V_CE = -10V
I_C = -500mA, V_CE = -10V
V
I_C = -150mA, I_BB = -15mA
I_C = -500mA, I_BB = -50mA
V
I_C = 150mA, I_BB = 15mA
I_C = 500mA, I_BB = 50mA
pF
pF
MHz
V_CB = -10V, f = 1.0MHz, I_E = 0
V_EB = -2.0V, f = 1.0MHz, I_C = 0
V_CE = -20V, I_C = -50mA,
f = 100MHz
ns
ns
V_CC = -30V, I_C = -150mA,
I_B1 = -15mA
ns
ns
ns
V_CC = -6.0V, I_C = -150mA,
I_B1 = I_B2 = -15mA
ns
Notes: 3. Short duration pulse test used to minimize self-heating effect.
200
Note 1
f = 1MHz
150
100
Cibo
50
Cobo
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature (Total Device)
DS30109 Rev. 10 - 2
2 of 4
www.diodes.com
V_R, REVERSE VOLTAGE (V)
Fig. 2, Typical Capacitance Characteristics
MMDT2907A
© Diodes Incorporated