MMDT2227 Datasheet, PDF (2/4 Pages) Transys Electronics – COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics, NPN2222A Section ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Symbol Min
V_(BR)CBO
75
V(BR)CEO
40
V(BR)EBO
6.0
ICBO
¾
I_CEX
¾
I_EBO
¾
IBL
¾
35
50
75
hFE
100
40
50
35
VCE(SAT)
¾
VBE(SAT)
0.6
¾
Cobo
¾
Cibo
—
fT
300
NF
¾
t_d
¾
tr
¾
Max
¾
¾
¾
10
10
10
20
¾
¾
¾
300
¾
¾
¾
0.3
1.0
1.2
2.0
8
25
¾
4.0
10
25
Unit
Test Condition
V
IC = 10mA, IE = 0
V
IC = 10mA, IB = 0
V
IE = 10mA, IC = 0
nA
V_CB = 60V, I_E = 0
mA
V_CB = 60V, I_E = 0, T_A = 150°C
nA
VCE = 60V, VEB(OFF) = 3.0V
nA
VEB = 3.0V, IC = 0
nA
VCE = 60V, VEB(OFF) = 3.0V
I_C = 100mA, V_CE = 10V
I_C = 1.0mA, V_CE = 10V
I_C = 10mA, V_CE = 10V
¾
I_C = 150mA, V_CE = 10V
I_C = 500mA, V_CE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
I_C = 150mA, V_CE = 1.0V
V
IC = 150mA, IB = 15mA
I_C = 500mA, I_B = 50mA
V
IC = 150mA, IB = 15mA
I_C = 500mA, I_B = 50mA
pF
pF
MHz
dB
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 20V, IC = 20mA,
f = 100MHz
VCE = 10V, IC = 100mA,
RS = 1.0kW, f = 1.0kHz
ns
V_CC = 30V, I_C = 150mA,
ns
V_BE(off) = - 0.5V, I_B1 = 15mA
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30122 Rev. B-2
2 of 4
MMDT2227