MMDT2222V_1 Datasheet, PDF (2/4 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Symbol Min
V_(BR)CBO
75
V(BR)CEO
40
V_(BR)EBO
6.0
ICBO
¾
I_CEX
¾
I_EBO
¾
I_BL
¾
35
50
75
h_FE
100
40
50
35
V_CE(SAT)
¾
V_BE(SAT)
0.6
¾
C_obo
¾
C_ibo
—
f_T
300
Max
¾
¾
¾
10
10
10
20
¾
¾
¾
300
¾
¾
¾
0.3
1.0
1.2
2.0
8
25
¾
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
NF
¾
4.0
t_d
¾
10
t_r
¾
25
t_s
¾
225
t_f
¾
60
Notes: 4. Short duration test pulse used to minimize self-heating effect.
Unit
Test Condition
V
I_C = 10mA, I_E = 0
V
IC = 10mA, IB = 0
V
I_E = 10mA, I_C = 0
nA
V_CB = 60V, I_E = 0
mA
V_CB = 60V, I_E = 0, T_A = 150°C
nA
VCE = 60V, VEB(OFF) = 3.0V
nA
VEB = 3.0V, IC = 0
nA
VCE = 60V, VEB(OFF) = 3.0V
I_C = 100mA, V_CE = 10V
I_C = 1.0mA, V_CE = 10V
I_C = 10mA, V_CE = 10V
¾
I_C = 150mA, V_CE = 10V
I_C = 500mA, V_CE = 10V
I_C = 10mA, V_CE = 10V, T_A = -55°C
I_C = 150mA, V_CE = 1.0V
V
IC = 150mA, IB = 15mA
I_C = 500mA, I_B = 50mA
V
IC = 150mA, IB = 15mA
I_C = 500mA, I_B = 50mA
pF
pF
MHz
dB
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 20V, IC = 20mA,
f = 100MHz
V_CE = 10V, I_C = 100mA,
R_S = 1.0kW, f = 1.0kHz
ns
VCC = 30V, IC = 150mA,
ns
V_BE(off) = - 0.5V, I_B1 = 15mA
ns
VCC = 30V, IC = 150mA,
ns
I_B1 = I_B2 = 15mA
DS30563 Rev. 4 - 2
2 of 4
www.diodes.com
MMDT2222V