MMBT5401_1 Datasheet, PDF (2/4 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Symbol Min
V(BR)CBO
V_(BR)CEO
V(BR)EBO
ICBO
IEBO
-160
-150
-5.0
¾
¾
50
hFE
60
50
V_CE(SAT)
¾
V_BE(SAT)
¾
Max
¾
¾
¾
-50
-50
¾
240
¾
-0.2
-0.5
-1.0
C_obo
¾
6.0
h_fe
40
200
Current Gain-Bandwidth Product
f_T
100
300
Noise Figure
NF
¾
8.0
Unit
Test Condition
V
I_C = -100mA, I_E = 0
V
I_C = -1.0mA, I_B = 0
V
I_E = -10mA, I_C = 0
nA
VCB = -120V, IE = 0
mA
V_CB = -120V, I_E = 0, T_A = 100°C
nA
V_EB = -3.0V, I_C = 0
IC = -1.0mA, VCE = -5.0V
¾
I_C = -10mA, V_CE = -5.0V
I_C = -50mA, V_CE = -5.0V
V
I_C = -10mA, I_B = -1.0mA
I_C = -50mA, I_B = -5.0mA
V
I_C = -10mA, I_B = -1.0mA
I_C = -50mA, I_B = -5.0mA
pF
¾
MHz
dB
VCB = -10V, f = 1.0MHz, IE = 0
V_CE = -10V, I_C = -1.0mA,
f = 1.0kHz
V_CE = -10V, I_C = -10mA,
f = 100MHz
V_CE = -5.0V, I_C = -200mA,
R_S = 10W, f = 1.0kHz
Ordering Information ^{(Note 4)}
Device
MMBT5401-7-F
Packaging
SOT-23
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Shipping
3000/Tape & Reel
Marking Information
Date Code Key
Year
Code
Month
Code
K4M
K4M = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
1998
J
Jan
1
1999
K
2000
L
2001
M
Feb March Apr
2
3
4
2002
N
May
5
2003
P
2004
R
2005
S
Jun Jul Aug
6
7
8
2006
T
Sep
9
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
DS30057 Rev. 7 - 2
2 of 4
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MMBT5401