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MMBT5401_08 Datasheet, PDF (2/4 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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MMBT5401
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
VBE(SAT)
Cobo
hfe
fT
Noise Figure
NF
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Min
-160
-150
-5.0
⎯
⎯
50
60
50
⎯
⎯
⎯
40
100
⎯
Max
⎯
⎯
⎯
-50
-50
⎯
240
⎯
-0.2
-0.5
-1.0
6.0
200
300
8.0
Unit
Test Condition
V IC = -100μA, IE = 0
V IC = -1.0mA, IB = 0
V IE = -10μA, IC = 0
nA VCB = -120V, IE = 0
μA VCB = -120V, IE = 0, TA = 100°C
nA VEB = -3.0V, IC = 0
IC = -1.0mA, VCE = -5.0V
⎯ IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
pF
⎯
MHz
dB
VCB = -10V, f = 1.0MHz, IE = 0
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
VCE = -10V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -200μA,
RS = 10Ω, f = 1.0kHz
400
350
Note 1
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
10,000
VCE = 5V
1,000
TA = 150°C
100
TA = 25°C
10
TA = -50°C
1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
MMBT5401
Document number: DS30057 Rev. 9 - 2
2 of 4
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August 2008
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