MMBT3906LP_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006

MMBT3906LP
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
-40
-40
-6.0
-200
-200
Unit
V
V
V
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
(Note 5)
(Note 6)
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6)
Thermal Resistance, Junction to Lead
(Note 7)
Operating and Storage and Temperature Range
Symbol
PD
R_JA
R_JL
TJ, TSTG
Value
400
1000
310
120
120
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit JEDEC Class
V
3A
V
B
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
2 of 7
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May 2015
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